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Spp11n60c3 spi11n60c3, spa11n60c3, spa11n60c3 e8185 forward characteristics of body diode if f vsd parameter. A, october 20032003 fairchild semiconductor corporation0. The ibm system storage san48b5 switch is designed to meet the demands. The datasheet is printed for reference information only. Thermal characteristics characteristic symbol max unit. J datasheet, j pdf, j data sheet, j manual, j pdf, j, datenblatt, electronics j, alldatasheet, dwtasheet, datasheet, datasheets, data sheet, datas.
This is one package pinout of n50,if you need more pinouts please download n50s pdf datasheet. As per the law relating to information storage and personal integrity, you have carotdie right to oppose art 26 of that lawaccess art 34 of that law and rectify art 36 of that law your. The device adopts planar stripe and uses dmos technology to minimize and provide. Lm386 low voltage audio power amplifier datasheet rev. Electrical characteristics tamb 25 oc unless otherwise specified symbol parameter test conditions min. If the checkbox is invisible, the corresponding document cannot be downloaded in batch.
A, october 20032003 fairchild semiconductor corporationpackage dimensions continuedfigure 9. Absolute maximum ratings are stress ratings only and functional device operation is not implied. The content and s of the attached material are the property of its owner. Maximum drain currentvs case temperature10050050 datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Mar 18, 2019 j datasheet, j pdf, j data sheet, j manual, j pdf, j, datenblatt, electronics j, alldatasheet, dwtasheet, datasheet, datasheets, data sheet, datas. The ibm system storage san48b5 switch is designed to meet the demands of hyperscale private or hybrid cloud storage environments by delivering 16 gbps fibre channel. Best value n50 great deals on n50 from global n50 sellers. Datasheet contains the design specifications for product development. Sep 18, 2019 16n50c3 datasheet vds 560v, mos transistor infineon, spp16n50c3 datasheet, 16n50c3 pdf, 16n50c3 pinout, 16n50c3 equivalent, data, circuit, schematic. Operating and storage junction temperature range tj, tstg. Recent listings manufacturer directory get instant insight into any electronic component.
Storage temperature, tstg 65 150 c 1 jedec document jep155 states that 500v hbm allows safe manufacturing with a standard esd control process. Any increase in vdss, id or decrease in rds on will result in an increase of qg. Fairchild 500v nchannel mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Spp12n50c3 spi12n50c3, spa12n50c3 cool mos power transistor. Pulse width limited by maximum junction temperature 3. Maximum lead temperature for soldering purposes, 18 from case for 5 seconds. On semiconductor n50c mosfet are available at mouser electronics.
Unit reference section reference output voltage vref tj 25c, iref 1ma 5. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Video album songs mp4 free download nov 1, datasheet contains the design specifications for product development. Spp11n60c3 spi11n60c3, spa11n60c3 cool mos power transistor. It is a 2u, highdensity system containing up to twelve internal disk drives. Offer en29lv160cb70tip eon from kynix semiconductor hong kong limited.
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